Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

Silicon Carbide Schottky Diode

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 650V 32A TO252-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

650 V Discrete Silicon Carbide Schottky Diodes

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ZRECTM 10A, 650V SIC SCHOTTKY DI 分立半导体产品 二极管 - 整流器 - 单

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures