LOW PASS FLTR / SURF MTRoHS5

·Over 300 models in stock for a wide range of applications from DC to 15 GHz!\n·Low pass, high pass, band pass, band stop, and diplexers\n·Low insertion loss and excellent rejection\n·Low temperature co-fired ceramic (LTCC) packages as small as 0.13 x 0.06 x 0.04 in.

Low Pass Filter

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LOW PASS FLTR / SURF MT / RoHS

·Over 300 models in stock for a wide range of applications from DC to 15 GHz!\n·Low pass, high pass, band pass, band stop, and diplexers\n·Low insertion loss and excellent rejection\n·Low temperature co-fired ceramic (LTCC) packages as small as 0.13 x 0.06 x 0.04 in.

封装/外壳：4-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LTCC LOW PASS FILTER, DC - 800 M 滤波器 陶瓷滤波器

LOW PASS FILTERS

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LOW PASS FILTERS

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Low Pass Filter

文件：141.13 Kbytes Page：1 Pages

封装/外壳：4-SMD，无引线 包装：卷带（TR） 描述：LTCC LOW PASS FILTER, DC - 800 M 滤波器 陶瓷滤波器

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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