Lowest Cost, Dual Output Ultra-Miniature 1W SMT DC/DC Con vert ers

Key Features: • 1W Output Power • Ultra-Miniature SMT Case • UL Approved (File E245422) • Dual Outputs • Low 0.29” Profile • 1,000 VDC Isolation • >3.5 MHour MTBF • 3.3V, 5V, & 12V Inputs • LOWEST COST!

F100ED SERIES

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Low Cost, Dual Output High Isolation 1W SMT DC/DC Converters

Key Features: • 1W Output Power • 3,000 VDC Isolation • Ultra-Miniature SMT Case • UL Approved (File E245422) • Dual Outputs • Low 0.24” Profile • >3.5 MHour MTBF • 3.3, 5V, & 12V Inputs • LOWEST COST!

LF100EDI SERIES

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DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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