High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

LB1233M

Overview The LB1233M is a Darlington transistor array using NPN transistors. It is suitable for applications such as hammer drive, lamp control, relay drive, etc. It also incorporates a spark killer diode for the L load. Features • Designed for high voltage (VCEO ≥50V), large current

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

High-Voltage, High-Current Darlington Driver?

Fucntions and Features • 4-channel, high-voltage (65V), high-current (1.5A) Darlington driver. • On-chip spark killer diodes. • Capable of being direct driven with 5V-operated TTL. • NPN input high-active type.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free * High voltage, high speed power switch * Switch regulators * PWM inverter and Motor controls * Solenoid and relay drivers * Deflection circuits

High-voltage, large current darlington transistor array

High-Voltage, High- Current Darlington Transistor Array

LB1233M

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

General Purpose Tweezers

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3.6V/400mAh

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