High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

High-Voltage, High- Current Darlington Transistor Array

LB1233M

Overview The LB1233M is a Darlington transistor array using NPN transistors. It is suitable for applications such as hammer drive, lamp control, relay drive, etc. It also incorporates a spark killer diode for the L load. Features • Designed for high voltage (VCEO ≥50V), large current

LB1233M

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .625 x .030 Inches b) AWG of Ends 36 c) Number of Carriers 48 d) Nominal Percent Coverage N/A e) Total Number of Ends 384 f) Approx

Socket Outlets

文件：1.57505 Mbytes Page：4 Pages

LINEAR INTEGRATED CIRCUIT

文件：395.28 Kbytes Page：10 Pages

Variable RF Inductor

文件：326.46 Kbytes Page：2 Pages

500/10 35 DS GW

文件：121.87 Kbytes Page：2 Pages