| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 |   | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
- |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TE |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TE/泰科 |
2508+ |
/ |
473077 |
一级代理，原装现货 |
|||
ON/安森美 |
23+ |
TO |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
24+ |
90000 |
|||||
ON/安森美 |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RAYCHEM |
24+ |
SMD |
5000 |
全现原装公司现货 |
|||
SMC Corporation |
2022+ |
1 |
全新原装 货期两周 |
L4N60P芯片相关品牌
L4N60P规格书下载地址
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L4979MD013TR适用于汽车电子、工业控制、通信设备等对电压稳定性、可靠性和功耗要求较高的应用领域。
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2013-2-18
DdatasheetPDF页码索引
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