EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURE • Complementary to KTC8550.

General Purpose Transistor, TO-92, 30V, 0.8A

• High current application;

EPITAXIAL PLANAR NPN TRANSISTOR

文件：44.36 Kbytes Page：2 Pages

SEMICONDUCTOR TECHNICAL DATA

HIGH CURRENT APPLICATION. FEATURE ·Complementary to KTC8550A.

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH CURRENT APPLICATION.FEATURE\n·Complementary to KTC8550A.

General Purpose Transistor, SOT-23, 30V, 0.8A

• Complementary to KTC8550S;

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH CURRENT APPLICATION. FEATURE • Complementary to KTC8550S.

EPITAXIAL PLANAR NPN TRANSISTOR

文件：44.36 Kbytes Page：2 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：358.99 Kbytes Page：2 Pages

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

1.5A MOTOR DRIVER WITH BRAKE FUNCTION

文件：274.13 Kbytes Page：8 Pages

QPSK transmitter

文件：125.43 Kbytes Page：28 Pages

TDA8046H

文件：127.21 Kbytes Page：24 Pages