EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTC2020D/L.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTC2020D/L.

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.0V(Max) @IC= -2A APPLICATIONS · Low frequency amplifier

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.0V(Max) @IC= -2A APPLICATIONS · Low frequency amplifier

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTC2020D/L.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2022D/L.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2022D/L.

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -2.0V(Max) @IC= -4A APPLICATIONS · Low frequency amplifier

TO-252-2L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Low Collector-Emitter Saturation Voltage APPLICATIONS General Purpose Application

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • General purpose applications

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -2.0V(Max) @IC= -4A APPLICATIONS · Low frequency amplifier

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2022D/L.

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTC2025D/L

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.4V(Max) @IC= -0.5A APPLICATIONS · Low frequency amplifier

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.4V(Max) @IC= -0.5A APPLICATIONS · Low frequency amplifier

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTC2025D/L

EPITAXIAL PLANAR PNP TRANSISTOR (INDUSTRIAL USE, GENERAL PURPOSE)

INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2026.

isc Silicon PNP Power Transistors

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Complement to Type KTC2026 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Desi

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low collector saturation voltage, complementary to KTC2026. Applications General purpose amplifier.

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) ·Low Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2028.

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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Bipolar Transistor

General Purpose Transistor, DPAK, -80V, -3A

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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PNP Transistors

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PNP Transistors

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PNP Transistors

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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PNP Transistors

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PNP Transistors

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PNP Transistors

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0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

104/204 In-Line Threaded Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging; ideal for viscous media, slurries and emulsions „ Large 21/2˝ diaphragm compatib

Smooth, high torque, roller ratchet handle

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