EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2028.

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) ·Low Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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PNP Transistors

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PNP Transistors

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PNP Transistors

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Inst, 4 Pr #18 Str BC, PVC-NYL Ins E1, IS/OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 4 Pair 18AWG (7x26) Bare Copper, PVC-NYL Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR

Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES • Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

Audio Frequency Amplifier Applications

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MINIMIZE POWER LOSSES OF LIGHTLY LOADED FLYBACK

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GULLWING CASCADABLE ARJ1049 AMPLIFIER

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