NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703

Monolithic Construction With Built-in Base-Emitter Resistors

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NPN Epitaxial Silicon Darlington Transistor

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

• Current ratings to 35A • VRRM to 150V • Only fused-in-glass diodes used • 150 °C junction temperature • Surge ratings to 25A • Recovery time: 50nS • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • Sn/Pb terminations

M8 Plastic Passive I/O Box

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INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

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Panel Mount for 5x20 mm und 6.3x32 mm Fuses

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