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KRC282M

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

KRC282M

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION.\nAUDIO MUTING APPLICATION.FEATURES\n● High emitter-base voltage : VEBO=25V(Min)\n● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\n● Low on resistance : Ron=1 (Typ.) (IB=5mA)\n● With Built-in Bias Resistors.\n● Simplify Circuit Design.\n● Reduce a Quantity of Part ● High emitter-base voltage : VEBO=25V(Min)\n● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\n● Low on resistance : Ron=1 (Typ.) (IB=5mA)\n● With Built-in Bias Resistors.\n● Simplify Circuit Design.\n● Reduce a Quantity of Parts and Manufacturing Process.;

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

NTE

Round.Top View Type

文件:32.36 Kbytes Page:1 Pages

PANASONIC

松下

KRC282M产品属性

  • 类型

    描述

  • 型号

    KRC282M

  • 制造商

    KEC

  • 制造商全称

    KEC(Korea Electronics)

  • 功能描述

    EPITAXIAL PLANAR NPN TRANSISTOR(SWITCHING, AUDIO MUTING)

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