EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATIONS. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity if Parts and manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

General Purpose BRT, TO-92, 50V, 0.1A

• With Built-in Bias Resistors\n• Simplify circuit design\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Packing Density.;

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATIONS. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity if Parts and manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATIONS. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity if Parts and manufacturing Process.

General Purpose BRT, SOT-23, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

Digital Transistor

Features ® Epitaxial planar die construction © Builtin biasing resistors (Ri: 220, Rx: 47k) | Also avaiable in ead ree version | © RoHS compliant wih Halogen free.

NPN Silicon Epitaxial Planar Transistor

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages