位置：首页 > IC中文资料第7159页 > KM6264B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KM6264B | 8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 |   | |
KM6264B | 8Kx8 bit Low Power CMOS Static RAM | SAMSUNG 三星 | | |
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNGs advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | SAMSUNG 三星 | | ||
8192-word x 8-bit High Speed CMOS Static RAM
| HITACHIHitachi Semiconductor 日立日立公司 | | ||
8K x 8 Bit Fast Static RAM The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional | MOTOROLA 摩托罗拉 | | ||
8KX8-Bit CMOS SRAM 文件：492.22 Kbytes Page：6 Pages | HYNIX 海力士 | | ||
High Speed Operational Amplifier 文件：427.67 Kbytes Page：12 Pages | NSC 国半 | | ||
High Speed Operational Amplifier 文件：427.67 Kbytes Page：12 Pages | NSC 国半 | |
KM6264B产品属性
- 类型
描述
- 型号
KM6264B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
8Kx8 bit Low Power CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG(三星) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG |
22+ |
DIP-28 |
8000 |
原装正品支持实单 |
|||
SEC |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
SAMSUNG/三星 |
2025+ |
DIP |
4950 |
原装进口价格优 请找坤融电子! |
|||
Samsung |
25+ |
12 |
公司优势库存 热卖中!! |
||||
SAMSUNG/三星 |
2402+ |
DIP |
8324 |
原装正品!实单价优! |
|||
SAMSUNG |
22+ |
SOP28 |
5000 |
全新原装现货!价格优惠!可长期 |
|||
SAMSUNG |
24+ |
DIP28 |
5000 |
全新原装正品,现货销售 |
|||
三星 |
23+ |
SOP14 |
5000 |
原装正品,假一罚十 |
|||
SAMSUNG |
24+ |
DIP-28 |
14 |
KM6264B规格书下载地址
KM6264B参数引脚图相关
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DdatasheetPDF页码索引
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