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型号 功能描述 生产厂家 企业 LOGO 操作
HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit high speed CMOS static RAM, 150ns

HITACHIHitachi Semiconductor

日立日立公司

8K x 8 Bit Fast Static RAM

The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional

MOTOROLA

摩托罗拉

8KX8-Bit CMOS SRAM

文件:492.22 Kbytes Page:6 Pages

HYNIX

海力士

HM6264A产品属性

  • 类型

    描述

  • 型号

    HM6264A

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    8192-word x 8-bit High Speed CMOS Static RAM

更新时间:2026-3-17 21:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Hit
25+
5
公司优势库存 热卖中!!
HITACHI
9141+
SOP28
14
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI
24+
SOP
2000
全新原装深圳仓库现货有单必成
N/A
24+/25+
10
原装正品现货库存价优
HIT
24+
DIP
6250
全新原装现货,欢迎询购!!
25+
SOP
2700
全新原装自家现货优势!
HITACHI
25+
SOP28
10500
全新原装现货,假一赔十
S
2450+
SMD
8850
只做原装正品假一赔十为客户做到零风险!!
HITACHI
2016+
SOP28
3500
本公司只做原装,假一罚十,可开17%增值税发票!
HITACHI
25+
DIP28
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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