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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM6264A | 8192-word x 8-bit High Speed CMOS Static RAM
| HITACHIHitachi Semiconductor 日立日立公司 | ||
HM6264A | 8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | ||
HM6264A | 8192-word x 8-bit High Speed CMOS Static RAM | HITACHIHitachi Semiconductor 日立日立公司 | ||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit high speed CMOS static RAM, 150ns • Low-power standby\n — 0.1 mW (typ)\n — 10 µW (typ) L-/LL-version\n• Low power operation\n — 15 mW/MHz (typ)\n• Fast access time\n — l00/120/150 ns (max)\n• Single +5 V supply\n• Completely static memory\n — No clock or timing strobe required\n• Equal access and cycle time\n• Common data ; | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HITACHIHitachi Semiconductor 日立日立公司 | |||
8K x 8 Bit Fast Static RAM The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional | MOTOROLA 摩托罗拉 | |||
8KX8-Bit CMOS SRAM 文件:492.22 Kbytes Page:6 Pages | HYNIX 海力士 |
HM6264A产品属性
- 类型
描述
- 型号
HM6264A
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
8192-word x 8-bit High Speed CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
12+ |
DIP |
30 |
公司原装现货 |
|||
HIT |
26+ |
DIP |
6250 |
全新原装现货,欢迎询购!! |
|||
HIT |
2023+ |
DIP |
53500 |
正品,原装现货 |
|||
HITACHI/ |
24+ |
SOP-28 |
66500 |
只做原装进口现货 |
|||
HITACHI |
26+ |
DIP28 |
9880 |
只做原装,欢迎来电资询 |
|||
HITACHI/日立 |
24+ |
SOP28 |
99200 |
郑重承诺只做原装进口现货 |
|||
HITACHI |
25+ |
DIP28 |
98900 |
原厂原装正品现货!! |
|||
HMC原装特 |
25+ |
DIP-28 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
HIT |
2021+ |
DIP |
6800 |
原厂原装,欢迎咨询 |
|||
HITACHI |
2025+ |
DIP28 |
4000 |
原装进口价格优 请找坤融电子! |
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HM6264A规格书下载地址
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- HM624256P-35
- HM624256LP-45
- HM624256LP-35
- HM624256LJP-45
- HM624256LJP-35
- HM624256JP-45
- HM624256JP-35
- HM624256ALP-20
- HM624256ALJP20
- HM624256AJP25T
- HM624256AJP-20
- HM624100JP-25
- HM624100JLP-45
- HM624100JLP-35
- HM6239
- HM6238
- HM6237
- HM6235
- HM62256
- HM6224
- HM6220
- HM6218
- HM6217
- HM6215
- HM6213
- HM6212
- HM6211
- HM6210
- HM6208L
- HM6208H
- HM6208
HM6264A数据表相关新闻
HM658128ALFP
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HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列,HMA2701系列,HMA124
2012-11-7
DdatasheetPDF页码索引
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