型号 功能描述 生产厂家 企业 LOGO 操作
HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit high speed CMOS static RAM, 150ns

HITACHIHitachi Semiconductor

日立日立公司

8K x 8 Bit Fast Static RAM

The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional

MOTOROLA

摩托罗拉

8KX8-Bit CMOS SRAM

文件:492.22 Kbytes Page:6 Pages

HYNIX

海力士

HM6264A产品属性

  • 类型

    描述

  • 型号

    HM6264A

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    8192-word x 8-bit High Speed CMOS Static RAM

更新时间:2026-3-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
2016+
SOP28
3500
本公司只做原装,假一罚十,可开17%增值税发票!
HITACHI
12+
DIP
30
公司原装现货
HIT
25+23+
SMD
42106
绝对原装正品全新进口深圳现货
INIERSIL
25+
SOP-28
3200
全新原装、诚信经营、公司现货销售
HITACHI
2025+
DIP28
4000
原装进口价格优 请找坤融电子!
HITACHI
25+
SOP28
10500
全新原装现货,假一赔十
INIERSIL
23+
SOP-28
3700
绝对全新原装!现货!特价!请放心订购!
A
24+
DIP-28
5
Hit
25+
5
公司优势库存 热卖中!!
HIT
2025+
DIP
3485
全新原装、公司现货热卖

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