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型号 功能描述 生产厂家 企业 LOGO 操作
HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

HM6264A

8192-word x 8-bit High Speed CMOS Static RAM

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit high speed CMOS static RAM, 150ns

• Low-power standby\n   — 0.1 mW (typ)\n   — 10 µW (typ) L-/LL-version\n• Low power operation\n   — 15 mW/MHz (typ)\n• Fast access time\n   — l00/120/150 ns (max)\n• Single +5 V supply\n• Completely static memory\n   — No clock or timing strobe required\n• Equal access and cycle time\n• Common data ;

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HITACHIHitachi Semiconductor

日立日立公司

8K x 8 Bit Fast Static RAM

The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional

MOTOROLA

摩托罗拉

8KX8-Bit CMOS SRAM

文件:492.22 Kbytes Page:6 Pages

HYNIX

海力士

HM6264A产品属性

  • 类型

    描述

  • 型号

    HM6264A

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    8192-word x 8-bit High Speed CMOS Static RAM

更新时间:2026-5-17 23:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
26+
DIP28
9880
只做原装,欢迎来电资询
HITACHI
2016+
SOP28
3500
本公司只做原装,假一罚十,可开17%增值税发票!
HITACHI
2023+
SOP-28
8635
一级代理优势现货,全新正品直营店
HIT
25+23+
SMD
42106
绝对原装正品全新进口深圳现货
INIERSIL
25+
SOP-28
3200
全新原装、诚信经营、公司现货销售
HITACHI
2025+
DIP28
4000
原装进口价格优 请找坤融电子!
A
24+
DIP-28
5
Hit
25+
5
公司优势库存 热卖中!!
HIN
17+
DIP
6200
100%原装正品现货
HIT
23+
DIP
5000
原装正品,假一罚十

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