N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

Planar MOSFETs, DPAK(1), 525V, 4.1A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4A@ TC=25℃ ·Drain Source Voltage -VDSS=530V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig