位置：首页 > IC中文资料第4695页 > FDD5N53TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDD5N53TM | N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 |   | |
MOSFET N-CH 530V 4A DPAK | ONSEMI 安森美半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | |
FDD5N53TM产品属性
- 类型
描述
- 型号
FDD5N53TM
- 功能描述
MOSFET N-Ch
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FDD |
22+ |
SOT23-6 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
30000 |
全新原装正品支持含税 |
|||
24+ |
SOP |
153 |
|||||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHIL |
2025+ |
TO-252-2 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
23+ |
65480 |
||||||
onsemi(安森美) |
25+ |
TO-252(DPAK) |
7734 |
样件支持,可原厂排单订货! |
|||
F |
23+ |
DPAK |
8400 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD |
11+ |
TO-252 |
35000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
90000 |
全新原装现货 |
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FDD5N53TM规格书下载地址
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DdatasheetPDF页码索引
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