R.F. AND SWITCHING TRANSISTORS N-P-N, HF. UND SCHALTTRANSISTOREN N-P-N

R.F. AND SWITCHING TRANSISTORS N-P-N, HF. UND SCHALTTRANSISTOREN N-P-N

二合一移动电源芯片

丝印代码：-MH；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

丝印代码：-MN；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high