丝印代码：-MH；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

丝印代码：-MH；RF Manual 16th edition

丝印代码：-MH；NPN 5 GHz wideband transistors

NPN 5 GHz宽频带晶体管

丝印代码：tMN；NPN 9 GHz wideband transistors

丝印代码：tMN；RF Manual 16th edition

丝印代码：-MN；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

丝印代码：tMN；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

丝印代码：tMN；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

丝印代码：tMN；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

丝印代码：-MN；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

丝印代码：tMN；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

丝印代码：tMN；RF Manual 16th edition

丝印代码：tMN；NPN 9 GHz wideband transistors

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

RF Manual 16th edition

封装/外壳：TO-253-4，TO-253AA 包装：带 描述：RF TRANS NPN 15V 5GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：RF TRANS NPN 15V 5GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 5 GHz wideband transistors

文件：93.15 Kbytes Page：12 Pages

NPN 5 GHz wideband transistors

文件：93.15 Kbytes Page：12 Pages

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high