This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=800V, ID

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=800V, ID

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

Planar MOSFETs, TO-220IS(1), 800V, 4A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：389.87 Kbytes Page：6 Pages

Fast Switching Speed

文件：49.72 Kbytes Page：2 Pages

4.0A, 800V N-CHANNEL POWER MOSFET

文件：201.52 Kbytes Page：6 Pages

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：165.63 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：398.61 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：319.64 Kbytes Page：2 Pages