N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

Planar MOSFETs, TO-220IS(1), 650V, 3.6A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

Planar MOSFETs, TO-220IS(1), 650V, 3.6A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：390.04 Kbytes Page：6 Pages

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

Drain Current ID= 4A@ TC=25C

文件：136.78 Kbytes Page：2 Pages

Power MOSFET

文件：1.07616 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages

650V N-Channel Power MOSFET

文件：2.82624 Mbytes Page：10 Pages