位置：首页 > IC中文资料第9682页 > 4N65
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4N65 | 4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 |   | |
4N65 | N-channel power MOS tube Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A | UMW 友台半导体 | | |
4N65 | MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits | EVVOSEMI 翊欧 | | |
4N65 | 650V N-Channel Power MOSFET Features RDS(ON) | SY 顺烨电子 | | |
4N65 | 650V N-Channel Planar MOSFET Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability | SY 顺烨电子 | | |
4N65 | 4A , 650V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
4N65 | N-channel power MOS tube 文件：540.65 Kbytes Page：6 Pages | UMW 友台半导体 | | |
4N65 | isc N-Channel MOSFET Transistor 文件：320.14 Kbytes Page：2 Pages | ISC 无锡固电 | | |
4N65 | N-CHANNEL POWER MOSFET 文件：2.9565 Mbytes Page：9 Pages | SUNMATE 森美特 | | |
4N65 | N-CHANNEL POWER MOSFET 文件：607.6 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | |
4N65 | 4A mps,650 Volts N-CHANNEL MOSFET 文件：201.07 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
4N65 | Power MOSFET 文件：1.07616 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
4N65 | 650V N-Channel Power MOSFET 文件：2.82624 Mbytes Page：10 Pages | DYELEC 迪一电子 | | |
4N65 | Drain Current ID= 4A@ TC=25C 文件：136.78 Kbytes Page：2 Pages | ISC 无锡固电 | | |
650V N-Channel Planar MOSFET Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability | SY 顺烨电子 | | ||
650V N-Channel Planar MOSFET Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability | SY 顺烨电子 | | ||
N-channel power MOS tube Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A | UMW 友台半导体 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
N-channel power MOS tube Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A | UMW 友台半导体 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC 4N65Z is ahigh voltage power MOSFET designed to have better characteristics, such as fast s witching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usuall y usedin hi gh speed switching applications i | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC 4N65Z is ahigh voltage power MOSFET designed to have better characteristics, such as fast s witching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usuall y usedin hi gh speed switching applications i | UTC 友顺 | | ||
4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC 4N65Z is ahigh voltage power MOSFET designed to have better characteristics, such as fast s witching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usuall y usedin hi gh speed switching applications i | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：368.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：320.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
4A 650V N-channel enhancement mode field effect transistor 文件：1.06088 Mbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
N-CHANNEL POWER MOSFET 文件：211.71 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：2.9565 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：253.12 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：2.9565 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.9565 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：368.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：253.12 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：246.28 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.43 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：368.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：368.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：253.12 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08661 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
4N65产品属性
- 类型
描述
- 型号
4N65
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
4 Amps, 650 Volts N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UBIQ |
25+ |
TO220F |
15000 |
全新原装现货,价格优势 |
|||
UTC |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
UTC/友顺 |
24+ |
TO-220F |
50000 |
全新原装,一手货源,全场热卖! |
|||
SSCP |
24+ |
SSCP |
33500 |
全新进口原装现货,假一罚十 |
|||
UTC/友顺 |
21+ |
TO-251 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
UTC/友顺 |
20+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
长电 |
25+23+ |
TO-220F |
24617 |
绝对原装正品全新进口深圳现货 |
|||
友顺 UTC |
21+ |
TO-251 |
49550 |
原装正品，实单请联系 |
|||
VBSEMI/微碧半导体 |
24+ |
TO251 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
UTC(友顺) |
24+/25+ |
TO-220F1 |
50 |
UTC原厂一级代理商,价格优势! |
4N65规格书下载地址
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4N65数据表相关新闻
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2023-3-164N60KG-TO252R-TGTC_UTC代理商
4N60KG-TO252R-TGTC_UTC代理商
2023-3-64N60KG-TO252R-TGTC_UTC代理商
4N60KG-TO252R-TGTC_UTC代理商
2023-3-24N65L-TO220F1T-TGQ_UTC代理商
4N65L-TO220F1T-TGQ_UTC代理商
2023-2-174N80L-TO252R-TGFC_UTC代理商
4N80L-TO252R-TGFC_UTC代理商
2023-2-13
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