丝印代码：4N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

丝印代码：4N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

丝印代码：4N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

丝印代码：4N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

650V N-Channel Power MOSFET

Features RDS(ON)

丝印代码：4N65AED；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

丝印代码：4N65AED；650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET 4N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

MOSFET(N-Channel)

FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits

4A , 650V N-CHANNEL    POWER MOSFET

The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, • RDS(ON) = 2.5 Ω @VGS = 10 V \n• Ultra Low Gate Charge ( typical 15 nC )   \n• Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

N-channel power MOS tube

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N-CHANNEL POWER MOSFET

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650V N-Channel Power MOSFET

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Power MOSFET

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4A mps,650 Volts N-CHANNEL MOSFET

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N-CHANNEL POWER MOSFET

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Drain Current ID= 4A@ TC=25C

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isc N-Channel MOSFET Transistor

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丝印代码：4N65AEP；650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET 4N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

丝印代码：4N65AEP；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

丝印代码：4N65D；MOSFET

Features - Low RDS(ON). - Low gatecharge. - Low reverse transfer capacitances. - Fast switching.

丝印代码：4N650；N-Channel Super Junction Power MOSFET

文件：967.12 Kbytes Page：11 Pages

丝印代码：4N650；N-Channel Super Junction Power MOSFET

文件：641 Kbytes Page：9 Pages

丝印代码：4N650；N-Channel Super Junction Power MOSFET

文件：641 Kbytes Page：9 Pages

丝印代码：4N650；N-Channel Super Junction Power MOSFET

文件：967.12 Kbytes Page：11 Pages

丝印代码：4N650；N-Channel Super Junction Power MOSFET

文件：967.12 Kbytes Page：11 Pages

丝印代码：4N65AT；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

丝印代码：4N65AF；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

丝印代码：4N65AS；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

丝印代码：4N65AS；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

丝印代码：4N65AMJ；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

丝印代码：4N65AD；4A 650V N-channel enhancement mode field effect transistor

文件：1.06088 Mbytes Page：7 Pages

650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including

4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including

4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65Kis a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications including

4A, 650V N-CHANNEL POWER MOSFET

The UTC 4N65K-MT is a high voltage power MOSFETdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and have a highrugged avalanche characteristic. This power MOSFET is usuallyused in high speed switching applications including power supplies, • RDS(ON) < 2.5Ω @VGS = 10 V\n• Fast Switching Capability\n• Avalanche Energy Specified\n• Improved dv/dt Capability, High Ruggedness;

4A, 650V N-CHANNEL  POWER MOSFET

The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power suppl • RDS(ON) < 2.8Ω @VGS = 10 V, ID = 2.2 A \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4A, 650V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

4A, 650V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ