型号 功能描述 生产厂家&企业 LOGO 操作
4N65

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
4N65

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)≤2.7(VGS=10V) *ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
4N65

MOSFET(N-Channel)

FEATURES RobustHighVoltageTerminrtion AvalancheEnergySpecified Source-to-DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode DiodeisCharacterrizedforUseinBridgeCircuits

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
4N65

650VN-ChannelPowerMOSFET

Features RDS(ON)

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
4N65

650VN-ChannelPlanarMOSFET

Features EMIandperfomancebalanced Fastswitchingcapability 100%avalanchtested Improveddv/dtcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
4N65

N-channelpowerMOStube

文件:540.65 Kbytes Page:6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
4N65

iscN-ChannelMOSFETTransistor

文件:320.14 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
4N65

N-CHANNELPOWERMOSFET

文件:2.9565 Mbytes Page:9 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
4N65

N-CHANNELPOWERMOSFET

文件:607.6 Kbytes Page:7 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
4N65

4Amps,650VoltsN-CHANNELMOSFET

文件:201.07 Kbytes Page:2 Pages

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
4N65

PowerMOSFET

文件:1.07616 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
4N65

650VN-ChannelPowerMOSFET

文件:2.82624 Mbytes Page:10 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
4N65

DrainCurrentID=4A@TC=25C

文件:136.78 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

650VN-ChannelPlanarMOSFET

Features EMIandperfomancebalanced Fastswitchingcapability 100%avalanchtested Improveddv/dtcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)≤2.7(VGS=10V) *ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65KisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsincluding

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65KisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsincluding

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65KisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsincluding

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)≤2.7(VGS=10V) *ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65-TC1isaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitchingperformance. Italsocanwithstandhighenergypulseinthe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65-TC1isaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitchingperformance. Italsocanwithstandhighenergypulseinthe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4Amps,650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsinclud

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC4N65-TC1isaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitchingperformance. Italsocanwithstandhighenergypulseinthe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

„DESCRIPTION TheUTC4N65ZisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

„DESCRIPTION TheUTC4N65ZisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

4A,650VN-CHANNELPOWERMOSFET

„DESCRIPTION TheUTC4N65ZisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanche characteristic.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELENHANCEMENTMODEMOSFET

文件:368.33 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

iscN-ChannelMOSFETTransistor

文件:320.14 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

4A650VN-channelenhancementmodefieldeffecttransistor

文件:1.06088 Mbytes Page:7 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

N-CHANNELPOWERMOSFET

文件:211.71 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:2.9565 Mbytes Page:9 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELPOWERMOSFET

文件:253.12 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:2.9565 Mbytes Page:9 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELPOWERMOSFET

文件:2.9565 Mbytes Page:9 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELENHANCEMENTMODEMOSFET

文件:368.33 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:253.12 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:246.28 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:374.43 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELENHANCEMENTMODEMOSFET

文件:368.33 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELENHANCEMENTMODEMOSFET

文件:368.33 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:246.28 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:374.43 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:253.12 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)MOSFET

文件:1.08661 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

4N65产品属性

  • 类型

    描述

  • 型号

    4N65

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    4 Amps, 650 Volts N-CHANNEL POWER MOSFET

更新时间:2025-8-3 9:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
23+/24+
TO-252TR
28198
主推型号,原装正品,终端BOM表可配单,可开13点税
士兰微
2406+
TO-220
71260
诚信经营!进口原装!量大价优!
VBSEMI/微碧半导体
24+
TO251
7800
全新原厂原装正品现货,低价出售,实单可谈
UTC
21+
TO-220F1
20000
原装正品价格优惠,志同道合共谋发展
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
UTC/友顺
25+
TO-220F1
32360
UTC/友顺全新特价4N65L-TF1-T即刻询购立享优惠#长期有货
TRINNO
24+
TO220F
11385
原装现货假一赔十
AUK
23+
TO220
3000
原装正品假一罚百!可开增票!
UTC/友顺
21+
TO-251
6856
百域芯优势 实单必成 可开13点增值税
士兰微
22+
TO-220F
998041
原装正品现货,可开13点税

4N65芯片相关品牌

  • ALPS
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • TECHPUBLIC
  • YEONHO

4N65数据表相关新闻