N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS(Min.)= 200V, ID= 15A • Dr

Planar MOSFETs, DPAK(1), 200V, 15A

200V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

isc N-Channel MOSFET Transistor

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200V N-Channel MOSFET-M

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200V N-Channel MOSFET-T

文件：2.3194 Mbytes Page：8 Pages