型号 功能描述 生产厂家&企业 LOGO 操作
FQA19N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
FQA19N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.17Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

文件:299.49 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

200VN-ChannelMOSFET-M

文件:5.07505 Mbytes Page:10 Pages

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FOSTER

200VN-ChannelMOSFET-T

文件:2.3194 Mbytes Page:8 Pages

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FOSTER

FQA19N20产品属性

  • 类型

    描述

  • 型号

    FQA19N20

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-5-30 16:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FS
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
FAIRCHILD/仙童
25+
TO-3P
140
原装正品,假一罚十!
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
FSC
21+
TO-3P
300
原装现货假一赔十
FAI
23+
TO-3P
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
FAIRC
23+
TO-3P
7300
专注配单,只做原装进口现货
FAIRC
23+
TO-3P
7300
专注配单,只做原装进口现货
FAIRCHILD
24+
TO-247TO-3PTO-3PF
8866
FAIRCHILD/仙童
24+
NA/
488
优势代理渠道,原装正品,可全系列订货开增值税票
FSC
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!

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