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KBU807

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

Voltage Range 50 to 1000 Volts Current 8.0 Amperes Features UL Recognized File # E-96005 High surge current capability Ideal for printed circuit board Reliable low cost construction technique results in inexpensive product High temperature soldering guaranteed: 260℃ / 10 sec

TSC

台湾半导体

KBU807

BRIDGE RECTIFIERS 2.0 to 8.0 Amps

[REF INTERNATIONAL] BRIDGE RECTIFIERS 2.0 to 8.0 Amps SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED)

ETCList of Unclassifed Manufacturers

未分类制造商

KBU807

8.0A SINGLE PHASE BRIDGE RECTIFIER

Features • Diffused Junction • Low Forward Voltage Drop • High Current Capability • High Reliability • High Surge Current Capability • Ideal for Printed Circuit Boards • UL Recognized File # E157705

WTE

Won-Top Electronics

KBU807

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position: Any * Low leakage current

GWSEMI

唯圣电子

KBU807

8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

Features • Low Forward Voltage Drop • Ideal For Printer Circuit Boards • High Current Capability and High Reliability • High Surge Current Capability

KISEMICONDUCTOR

KBU807

BRIDGE RECTIFIERS

GWSEMI

唯圣电子

KBU807

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

文件:169.76 Kbytes Page:2 Pages

TSC

台湾半导体

KBU807

Single Phase 8.0 AMPS. Bridge Rectifiers

文件:499 Kbytes Page:2 Pages

TSC

台湾半导体

KBU807

Single Phase 8.0 AMPS. Bridge Rectifiers

文件:167.33 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a

TSC

台湾半导体

Single Phase 8.0 AMPS Glass Passivated Bridge Rectifiers

文件:171.69 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件:167.22 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件:522.09 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 8.0AMPS. Glass Passivated Bridge Rectifiers

文件:189.25 Kbytes Page:2 Pages

TSC

台湾半导体

Glass Passivated Bridge Rectifiers

文件:192.23 Kbytes Page:4 Pages

TSC

台湾半导体

8A, 1000V, Standard Bridge Rectifier

TSC

台湾半导体

封装/外壳:4-SIP,KBU 包装:管件 描述:BRIDGE RECT 1PHASE 1KV 8A KBU 分立半导体产品 二极管 - 桥式整流器

TSC

台湾半导体

封装/外壳:4-SIP,KBU 包装:管件 描述:BRIDGE RECT 1PHASE 1KV 8A KBU 分立半导体产品 二极管 - 桥式整流器

TSC

台湾半导体

Glass Passivated Bridge Rectifiers

文件:192.23 Kbytes Page:4 Pages

TSC

台湾半导体

Glass Passivated Bridge Rectifiers

文件:192.23 Kbytes Page:4 Pages

TSC

台湾半导体

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

PERKINELMER

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

NTE

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

NEC

瑞萨

KBU807产品属性

  • 类型

    描述

  • VRRM:

    1 000.00V

  • VF:

    1.10V

更新时间:2026-8-1 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TaiwanSemiconductor
24+
NA
3000
进口原装正品优势供应
tsc
25+
500000
行业低价,代理渠道
Taiwan Semiconductor Corporati
25+
4-SIP KBU
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TSC
2023+环保现货
扁桥
88000
专注军工、汽车、医疗、工业等方案配套一站式服务

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