Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction * Plastic material has Underwriters Laboratory flammability classifications 94V.O * Surge overload rating 200 amperes peak.

Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers

FEATURES • Surge overload rating -175 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has Underwriters Laboratory • Mounting postition:Any • Mounting torgue:5 In.Ib.Max

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4 / 6 / 8 Amperes FEATURES ● Surge overload rating -125~175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:A

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES ● Surge overload rating -175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:Any ● Mounting torgue:5 In.Ib.Max

8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705

封装/外壳：4-SIP，KBU 包装：卷带（TR） 描述：DIODE BRIDGE 8A 100V KBU 分立半导体产品 二极管 - 桥式整流器

Glass Passivated Bridge Rectifiers

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8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：52.8 Kbytes Page：4 Pages

Single Phase 8.0 AMPS Glass Passivated Bridge Rectifiers

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Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 8.0AMPS. Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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8A, 100V, Standard Bridge Rectifier

Glass Passivated Bridge Rectifier

Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High surge current capability * Ideal for printed circuit boards

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 100V 8A KBU 分立半导体产品 二极管 - 桥式整流器

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat