8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction * Plastic material has Underwriters Laboratory flammability classifications 94V.O * Surge overload rating 200 amperes peak.

8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705

8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705

8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：52.8 Kbytes Page：4 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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