Single Phase 4.0 AMPS. Silicon Bridge Rectifiers

Features ♦ UL Recoganized File # E-326243 ♦ Ideal for printed circuit board ♦ High case dielectric strength ♦ Plastic material has Underwriters laboratory flammability Classification 94V-0 ♦ Typical IR less then 0.1μA ♦ High surge current capability ♦ High temperature solderin

SINGLE-PHASE SILICON BRIDGE

VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 4.0 Amperes FEATURES • High Surge current capability • Ideal for printed circuit board • Realiable low cost construction technique results in inexpensive product • High temperature soldering quaranteed: 250°C /10 seconds/.375, (9.5mm)lead len

BRIDGE RECTIFIERS 2.0 to 8.0 Amps

[REF INTERNATIONAL] BRIDGE RECTIFIERS 2.0 to 8.0 Amps SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED)

SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position: Any * Low leakage current

Single Phase 8.0 AMPS. Bridge Rectifiers

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Single Phase 4.0 AMPS. Bridge Rectifiers

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Single Phase 4.0 AMPS. Silicon Bridge Rectifiers

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BRIDGE RECTIFIERS

Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers

Features ♦ UL Recoganized File # E-326243 ♦ Ideal for printed circuit board ♦ High case dielectric strength ♦ Plastic material has Underwriters laboratory flammability Classification 94V-0 ♦ Typical IR less then 0.1μA ♦ High surge current capability ♦ High temperature solderin

Single Phase 4.0 AMPS Glass Passivated Bridge Rectifiers

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Single Phase 4.0AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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4A, 200V, Standard Bridge Rectifier

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 200V 4A KBU 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 200V 4A KBU 分立半导体产品 二极管 - 桥式整流器

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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