Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2

1.5A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards ● Recognized File # E157705

Single Phase 1.5AMP. Glass Passivatec Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction ◇ High surge current capability ◇ High temperature soldering guaranteed: 260 °C / 10 seconds at 5 lbs., ( 2.3 kg ) tension ◇ Small size, simple installation

1.5A BRIDGE RECTIFIER

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1.5A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

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封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 50V 1.5A KBP 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 50V 1.5A KBP 分立半导体产品 二极管 - 桥式整流器

Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

文件：451.49 Kbytes Page：2 Pages

Glass Passivated Bridge Rectifiers

文件：220.79 Kbytes Page：4 Pages

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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