GLASS PASSIVATED

PRV : 50 - 1000 Volts Io : 4.0 Amperes FEATURES : * Glass passivated chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES : * Glass passivated chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free

BRIDGE RECTIFIERS

FEATURES • UL Recognized File # E469616 • Reliable low cost construction utilizing molded plastic technique • Ideal for printed circuit board • Low forward voltage drop • Low reverse leakage current • High surge current capability

4.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features • Glass Passivated Die Construction • Low Forward Voltage Drop • High Current Capability • High Reliability • High Surge Current Capability • Ideal for Printed Circuit Boards • Plastic Package has UL Flammability 94V-0

4.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Plastic Case Material has UL Flammability Classification Rating 94V-0

封装/外壳：4-SIP，KBL 包装：散装 描述：BRIDGE RECT 1PHASE 1KV 4A KBL 分立半导体产品 二极管 - 桥式整流器

Bridge Rectifiers

4.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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Single Phase Glass Passivated Silicon Bridge Rectifier

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BRIDGE RECTIFIERS

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BRIDGE RECTIFIERS

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Single Phase Glass Passivated Silicon Bridge Rectifier

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Silicon Bridge Rectifier

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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