Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Reliable low cost construction - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

Single Phase 4.0AMP. Glass Passivated Bridge Rectifiers

Single Phase 4.0AMP. Glass Passivated Bridge Rectifiers Features ◇
Glass passivated junction
◇ Ideal for printed circuit board ◇ Reliable low cost construction ◇ High surge current capability ◇ High temperature soldering guaranteed: 260oC / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 l

Silicon Bridge Rectifier

Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • Silver plated copper leads • Types from 50 V to 400 V VRRM • Not ESD Sensitive

封装/外壳：4-SIP，KBL 包装：卷带（TR） 描述：DIODE BRIDGE 4A 200V KBL 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBL 包装：散装 描述：BRIDGE RECT 1PHASE 200V 4A KBL 分立半导体产品 二极管 - 桥式整流器

4A, 200V, Standard Bridge Rectifier

Bridge Rectifiers

Single Phase Glass Passivated Silicon Bridge Rectifier

文件：312.33 Kbytes Page：3 Pages

Single Phase 4.0AMPS. Glass Passivated Bridge Rectifiers

文件：139.72 Kbytes Page：2 Pages

Glass Passivated Bridge Rectifiers

文件：199.45 Kbytes Page：4 Pages

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

文件：22.71 Kbytes Page：2 Pages