位置：首页 > IC中文资料第6595页 > K6F2008
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for | Samsung 三星 |   | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：130.9 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：130.9 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.62 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.62 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.62 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.62 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 | |
K6F2008产品属性
- 类型
描述
- 型号
K6F2008
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
1499 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SEC |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
SAMSUNG |
24+ |
TSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAMSUNG/三星 |
21+ |
TSOP |
1286 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SAMSUNG/三星 |
0501+ |
TSOP |
379 |
||||
SAM |
NEW |
TSOP |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SAMSUNG/三星 |
2022+ |
TSOP |
379 |
只做进口原装正品现货,开13%增值税票! |
|||
SAMSUNG/三星 |
21+ |
TSOP |
7500 |
全新原装长期特价销售 |
K6F2008芯片相关品牌
K6F2008规格书下载地址
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K6F2008数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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