位置：首页 > IC中文资料第6511页 > K6F2008V2E-YF55
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F2008V2E-YF55 | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：134.48 Kbytes Page：9 Pages | Samsung 三星 |   |
K6F2008V2E-YF55产品属性
- 类型
描述
- 型号
K6F2008V2E-YF55
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
SAMSUNG |
TSSOP |
756 |
正品原装--自家现货-实单可谈 |
||||
SAMSUNG |
24+ |
TSSOP |
5000 |
全现原装公司现货 |
|||
SAMSUNG |
25+ |
SOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
23+24 |
TSSOP |
29850 |
原厂原包装。终端BOM表可配单。可开13%增值税发票 |
|||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
SAMSANG |
2016+ |
TSSOP |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG10 |
21+ |
TSSOP |
10000 |
原装现货假一罚十 |
|||
SAMSUNG10 |
TSSOP |
22+ |
6000 |
十年配单,只做原装 |
|||
SAMSUNG/三星 |
1824+ |
TSOP |
4950 |
原装现货专业代理,可以代拷程序 |
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K6F2008V2E-YF55规格书下载地址
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K6F2008V2E-YF55数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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