型号 功能描述 生产厂家 企业 LOGO 操作
K6E0808C1E

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

K6E0808C1E

32K x 8 Bit High-Speed CMOS Static RAM

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32Kx8 Bit High Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32Kx8 Bit High Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

K6E0808C1E产品属性

  • 类型

    描述

  • 型号

    K6E0808C1E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    32K x 8 Bit High-Speed CMOS Static RAM

更新时间:2025-9-30 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUMSUNG
24+
NA/
29
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG
24+
SOJ
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
25+
SOJ
3200
全新原装、诚信经营、公司现货销售
SAMSUNG/三星
25+
SOJ
32360
SAMSUNG/三星全新特价K6E0808C1E-JC15即刻询购立享优惠#长期有货
SAMSUNG
0211+
SOJ28
2362
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
25+
NA
880000
明嘉莱只做原装正品现货
SAMSUNG/三星
22+
SOJ28
8000
原装正品支持实单
SEC
2402+
SOJ-28
8324
原装正品!实单价优!
SAMSUNG
19+
SOJ
15000
SAMSUNG/三星
2023+
SOJ28
2362
专注全新正品,优势现货供应

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