型号 功能描述 生产厂家 企业 LOGO 操作
K6E0808C1E

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

K6E0808C1E

32K x 8 Bit High-Speed CMOS Static RAM

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32Kx8 Bit High Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

32Kx8 Bit High Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

Samsung

三星

K6E0808C1E产品属性

  • 类型

    描述

  • 型号

    K6E0808C1E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    32K x 8 Bit High-Speed CMOS Static RAM

更新时间:2025-11-23 10:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
19+
SOJ
15000
SAMSUNG/三星
2025+
SOJ28
5000
原装进口价格优 请找坤融电子!
SEC
2402+
SOJ-28
8324
原装正品!实单价优!
SAMSUNG/三星
22+
SOJ28
8000
原装正品支持实单
SAMSUNG/三星
1824+
SOJ28
6047
原装现货专业代理,可以代拷程序
SEC
24+
SOJ28
1000
SAMSUNG/三星
25+
SOJ
10
就找我吧!--邀您体验愉快问购元件!
SAMSUNG
1923+
SOJ
3000
绝对进口原装现货
SAMSUNG/三星
23+
SOJ-28
50000
全新原装正品现货,支持订货
SAMSUNG
24+
SOJ
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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