位置：首页 > IC中文资料第5623页 > K6E0808C1E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6E0808C1E | 32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 |  |   |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHighSpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Cisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Cuses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHighSpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Cisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Cuses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | |
K6E0808C1E产品属性
- 类型
描述
- 型号
K6E0808C1E
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
32K x 8 Bit High-Speed CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
00+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG |
2023+ |
SOJ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
SUMSUNG |
23+ |
NA/ |
29 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG/三星 |
19+ |
9850 |
公司原装现货/随时可以发货 |
||||
SAMSUNG |
23+ |
SOJ |
20000 |
原厂原装正品现货 |
|||
SAMSUNG |
0211+ |
SOJ28 |
2362 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
1948+ |
SOJ28 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
Samsung/Samsung Group/三星/三 |
21+ |
SOJ |
6643 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG |
2023+ |
SOJ28 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SAMSUNG/三星 |
22+ |
SOJ28 |
8000 |
原装正品支持实单 |
K6E0808C1E芯片相关品牌
K6E0808C1E规格书下载地址
K6E0808C1E参数引脚图相关
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K7252M
- K7075P
- K7055
- K7045D2
- K7045D1
- K7045C
- K70150P
- K70100P
- K70100A
- K700107
- K700106
- K700105
- K700104
- K700103
- K700102
- K700101
- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6EB12J
- K6EB12
- K6E-6V-9
- K6E-24V-9
- K6E-115V-9
- K6E1004C1B-L20
- K6E1004C1B-L15
- K6E1004C1B-C20
- K6E1004C1B-C15
- K6E1004C1B
- K6E0808C1E-P
- K6E0808C1E-L
- K6E0808C1E-I15
- K6E0808C1E-I12
- K6E0808C1E-I10
- K6E0808C1E-I
- K6E0808C1E-C15
- K6E0808C1E-C12
- K6E0808C1E-C10
- K6E0808C1E-C
- K6E0808C1C-C
- K6E0808C1C-20
- K6E0808C1C-15
- K6E0808C1C-12
- K6E0808C1C
- K6DT-48V-9
- K6D-24V-9
- K6-COVER
- K6C-AB
- K6BYE1.5L306
- K6BYE1.55NL352
- K6BYE1.55NL328
- K6BYE1.55NL327
- K6BYE1.55NL315
- K6BYE1.55NL306
- K6BYE1.55NL302
- K6BYE1.55N
- K6BYE1.53NL352
- K6BYE1.53NL328
- K6BYE1.53NL327
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6E0808C1E数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050HYNIX2020+BGA K524G2GACJ-B050SKHYNIX2020+BGA K521F57ACM-A060HYNIX2020+BGA K524F2HACA-B050SKHYNIX2020+BGA K521H12ACB-B060HYNIX2020+BGA K524G2GACI-BO50HYNIX2020+BGA K521F57ACC-B050000HYNIX2020+BGA PM8018HYNIX2020BGA PM8015SKHYNIX2020BGA EMMC08G-W325S
2021-5-26K5-1658UN-01
商品目录行程开关 电路结构SPST-NO 作用力20gf 额定电压DC12V(DC) 额定电流50mA(DC) 开关功能Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
