位置：首页 > IC中文资料第5623页 > K6E0808C1E-L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6E0808C1E-L | 32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 |  |   |
32Kx8BitHighSpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Cisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Cuses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHighSpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Cisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Cuses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | | |
32Kx8BitHigh-SpeedCMOSStaticRAM GENERALDESCRIPTION TheK6E0808C1Eisa262,144-bithigh-speedStaticRandomAccessMemoryorganizedas32,768wordsby8bits.TheK6E0808C1Euses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricatedu | SamsungSamsung Group 三星三星半导体 | | |
K6E0808C1E-L产品属性
- 类型
描述
- 型号
K6E0808C1E-L
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
32K x 8 Bit High-Speed CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
SOJ |
5000 |
原装正品,假一罚十 |
|||
SAMSUNG |
23+ |
标准封装 |
18000 |
||||
SAMSUNG/三星 |
24+ |
SOJ28 |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG |
23+ |
NA |
3230 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
SAMSUNG/三星 |
21+ |
SOJ28 |
1709 |
||||
SAMSUNG |
2017+ |
SOJ28 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
SAMSUNG |
22+ |
SOJ |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
23+ |
PLCC28 |
6327 |
||||
SAMSUNG/三星 |
22+ |
SOJ28 |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG |
2022 |
SOJ28 |
140 |
原厂原装正品,价格超越代理 |
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K6E0808C1E-L规格书下载地址
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K6E0808C1E-L数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050HYNIX2020+BGA K524G2GACJ-B050SKHYNIX2020+BGA K521F57ACM-A060HYNIX2020+BGA K524F2HACA-B050SKHYNIX2020+BGA K521H12ACB-B060HYNIX2020+BGA K524G2GACI-BO50HYNIX2020+BGA K521F57ACC-B050000HYNIX2020+BGA PM8018HYNIX2020BGA PM8015SKHYNIX2020BGA EMMC08G-W325S
2021-5-26K5-1658UN-01
商品目录行程开关 电路结构SPST-NO 作用力20gf 额定电压DC12V(DC) 额定电流50mA(DC) 开关功能Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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