位置：首页 > IC中文资料第6434页 > K6E0808C1E-P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6E0808C1E-P | 32K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 |  |   |
32Kx8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 | | | |
32Kx8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 | | | |
32K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 | | | |
32K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 | | | |
32K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u | SamsungSamsung semiconductor 三星三星半导体 | | |
K6E0808C1E-P产品属性
- 类型
描述
- 型号
K6E0808C1E-P
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
32K x 8 Bit High-Speed CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
SOJ28 |
65480 |
||||
SAMSUNG/三星 |
24+ |
SOJ28 |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG |
00+/01+ |
NULL |
698 |
全新原装100真实现货供应 |
|||
SAMSUNG |
2022+ |
SOJ28 |
20000 |
只做原装进口现货.假一罚十 |
|||
SAMSUNG |
22+ |
SOJ |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
SOJ28 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
6000 |
面议 |
19 |
DIP/SMD |
||||
SAMSUNG |
2016+ |
SOJ28 |
6523 |
只做进口原装现货!假一赔十! |
|||
SAMSUNG |
23+ |
PLCC28 |
6327 |
||||
SAMSUNG/三星 |
22+ |
SOJ28 |
32936 |
原装正品现货 |
K6E0808C1E-P芯片相关品牌
K6E0808C1E-P规格书下载地址
K6E0808C1E-P参数引脚图相关
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K6E0808C1E-P数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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