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型号	功能描述	生产厂家企业	LOGO
K4S643232C	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC/L10	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC/L55	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC/L60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC/L70	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC/L80	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC10	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC55	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC70	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TC80	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TCSLASHL10	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TCSLASHL55	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TCSLASHL60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TCSLASHL70	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TCSLASHL80	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TL10	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TL55	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TL60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TL70	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232C-TL80	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po	Samsung 三星	Samsung
K4S643232H	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC/L70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TC70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TCSLASHL70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL50	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL55	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL60	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232H-TL70	64Mb H-die (x32) SDRAM Specification GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are	Samsung 三星	Samsung
K4S643232C-TC/L10	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL	Samsung 三星	Samsung
K4S643232E	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 文件：102.46 Kbytes Page：12 Pages	Samsung 三星	Samsung
K4S643232E	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 文件：101.31 Kbytes Page：12 Pages	Samsung 三星	Samsung
K4S643232E-	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 文件：101.31 Kbytes Page：12 Pages	Samsung 三星	Samsung
K4S643232E-TC/L/E/N/I/P	512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet	Samsung 三星	Samsung
K4S643232E-TC45	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 文件：102.46 Kbytes Page：12 Pages	Samsung 三星	Samsung

K4S643232产品属性

类型
描述
型号
K4S643232
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232供应商更多...

更新时间：2025-12-25 9:02:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	K4S643232C-TC60	SEC	23+	TSSOP	50000	全新原装正品现货,支持订货	询价
深圳市昌和盛利电子有限公司	K4S643232C-TC60	SAM	NEW	TSOP	28610	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市豪迈兴电子有限公司	K4S643232C-TC60	SAMSUNG	24+		5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市宇创芯科技有限公司	K4S643232C-TC60	SAMSUNG/三星	24+	TSSOP	9600	原装现货,优势供应,支持实单!	询价
深圳市胜彬电子有限公司	K4S643232C-TC60	SAMSUNG	22+	SSOP	8000	原装正品支持实单	询价
深圳市凌旭科技有限公司	K4S643232C-TC55	SAMSUNG	2016+	TSOP	2600	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市恒创达实业有限公司	K4S643232C-TC70	SAMSUNG	17+	TSSOP	6200	100%原装正品现货	询价
深圳瞄钧科技有限公司	K4S643232C-TC60	SAMSUNG	24+	TSSOP86	56800	特价现货,下单送华为手机.香港日本新加坡	询价
深圳市明嘉莱科技有限公司	K4S643232C-TC60	SAMSUNG/三星	25+	TSSOP-86	860000	明嘉莱只做原装正品现货	询价
深圳市晨豪科技有限公司	K4S643232C-TC55	SAMSUNG/三星	23+	TSOP	89630	当天发货全新原装现货	询价

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