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位置：首页 > IC中文资料第12674页 > K4S643232

型号 功能描述 生产厂家&企业 LOGO 操作
K4S643232C

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC/L10

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC/L55

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC/L60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC/L70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC/L80

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC10

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC55

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TC80

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TL10

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TL55

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TL60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TL70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232C-TL80

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC/L70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TC70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL50

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL55

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL60

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232H-TL70

64MbH-die(x32)SDRAMSpecification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TC45

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TC50

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TC55

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TC60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TC70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TE50

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TE60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TE70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TI

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：100.16 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TI60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：100.16 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TI70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：100.16 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TL45

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TL50

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TL55

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TL60

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4S643232E-TL70

2Mx32SDRAM512Kx32bitx4BanksSynchronousDRAMLVTTL

文件：102.46 Kbytes Page：12 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4S643232产品属性

  • 类型

    描述

  • 型号

    K4S643232

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232供应商更多...

更新时间：2024-5-29 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市勤思达科技有限公司
K4S643232C-TC10
SAMSUNG
23+
TSOP
1515
询价
深圳市佳鑫美电子科技有限公司
K4S643232C-TC10
SAMSUNG
22+
TSSOP-86
4650
询价
深圳市博浩通科技有限公司
K4S643232C-TC10
SAMSUNG
23+
TSOP
6200
特价库存
询价
深圳市赛尔通科技有限公司
K4S643232C-TC/L60
SAMSUNG
23+
65480
询价
深圳宇航军工半导体有限公司
K4S643232C-TC60
SAMSANG
19+
TSSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市英卓尔科技有限公司
K4S643232C-TC60
SAMSUNG
20+
SSOP
2960
诚信交易大量库存现货
询价
深圳市近平电子有限公司
K4S643232C-TC10
SAMSUNG
6000
面议
19
DIP/SMD
询价
深圳市星佑电子有限公司
K4S643232C-TC60
SAM
06+
TSOP
1000
自己公司全新库存绝对有货
询价
深圳市一线半导体有限公司
K4S643232C-TC60
SAMSUNG
00+
TSOP
9
询价
深圳市汇莱威科技有限公司
K4S643232C-TC60
SAMSUNG/三星
TSOP
265209
假一罚十原包原标签常备现货!
询价

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