型号 功能描述 生产厂家 企业 LOGO 操作
K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

K4S643232C

512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件:102.46 Kbytes Page:12 Pages

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件:101.31 Kbytes Page:12 Pages

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件:101.31 Kbytes Page:12 Pages

Samsung

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件:100.16 Kbytes Page:12 Pages

Samsung

三星

K4S643232C产品属性

  • 类型

    描述

  • 型号

    K4S643232C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
3320
原装现货,当天可交货,原型号开票
SAMSUNG
2016+
TSOP
2600
只做原装,假一罚十,公司可开17%增值税发票!
SAMSUNG
23+
TSOP86
20000
全新原装假一赔十
SEC
24+
TSSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
0043+
SOP
950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
22+
TSOP86
9565
SEC
25+
TSOP86
3629
原装优势!房间现货!欢迎来电!
22+
5000
只做原装鄙视假货15118075546
TSOP
22+
BGA
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

K4S643232C芯片相关品牌

K4S643232C数据表相关新闻