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型号 功能描述 生产厂家 企业 LOGO 操作
K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

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K4S643232C

512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件:101.31 Kbytes Page:12 Pages

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件:102.46 Kbytes Page:12 Pages

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件:101.79 Kbytes Page:12 Pages

SAMSUNG

三星

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V

文件:99.61 Kbytes Page:12 Pages

SAMSUNG

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K4S643232C产品属性

  • 类型

    描述

  • 型号

    K4S643232C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

更新时间:2026-3-17 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2016+
TSOP
2600
只做原装,假一罚十,公司可开17%增值税发票!
SAMSUNG
23+
TSOP86
20000
全新原装假一赔十
SEC
24+
TSSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
25+
93
公司优势库存 热卖中!
SAMSUNG
26+
SOP
360000
原装现货
SAMSUNG?
24+
TSSOP?
5000
只做原装正品现货 欢迎来电查询15919825718
SAMSUNG
23+
65480
SAMSUNG
24+
TSOP
6980
原装现货,可开13%税票
SEC
25+
TSOP86
3629
原装优势!房间现货!欢迎来电!
SEC
2450+
TSSOP
8850
只做原装正品假一赔十为客户做到零风险!!

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