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位置：首页 > IC中文资料第12674页 > K4S643232C

型号 功能描述 生产厂家 企业 LOGO 操作
K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C

512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

SAMSUNG

三星

K4S643232C-TC/L10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC/L55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC/L60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC/L70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC/L80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TCSLASHL10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TCSLASHL55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TCSLASHL60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TCSLASHL70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TCSLASHL80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TL10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TL55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TL60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TL70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TL80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232C-TC/L10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

SAMSUNG

三星

K4S643232E

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232E

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件：102.46 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232F

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件：101.79 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232F-

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V

文件：99.61 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232C产品属性

  • 类型

    描述

  • 型号

    K4S643232C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232C供应商更多...

更新时间：2026-5-18 13:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市向鸿伟业电子有限公司
K4S643232C-TC80
SAMSUNG/三星
2403+
TSSOP
11809
原装现货!欢迎随时咨询!
询价
深圳市佳鑫美电子科技有限公司
K4S643232C-JC60
SEC
25+
TSOP86
3629
原装优势!房间现货!欢迎来电!
询价
深圳市富芯乐电子科技有限公司
K4S643232C-TC80
SAMSUNG?
24+
TSSOP?
5000
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市美思瑞电子科技有限公司
K4S643232C-TC70
SAMSUNG/三星
22+
TSOP86
9565
询价
深圳市宇创芯科技有限公司
K4S643232C-TC80
SAMSUNG/三星
24+
TSSOP
9600
原装现货,优势供应,支持实单!
询价
深圳市坤融电子科技有限公司
K4S643232C-TL55
SAMSUNG/三星
2025+
TSOP
5000
原装进口价格优 请找坤融电子!
询价
深圳市纳艾斯科技有限公司
K4S643232C-TC60
SEC
24+
TSSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
上海鑫科润电子科技有限公司
K4S643232C-TC70
SAMSUNG
2000
TSOP
10
原装现货海量库存欢迎咨询
询价
上海磐岳电子有限公司
K4S643232CC80T
2023+
5800
进口原装,现货热卖
询价
上海凌岳电子科技有限公司（上海涵恩科技）
K4S643232C-TC80T
2023+
3000
进口原装现货
询价

K4S643232C芯片相关品牌

K4S643232C规格书下载地址

K4S643232C参数引脚图相关

K4S643232C数据表相关新闻

DdatasheetPDF页码索引

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