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位置：首页 > IC中文资料第5902页 > K4S643232H

型号 功能描述 生产厂家 企业 LOGO 操作
K4S643232H

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H

64Mb H-die (x32) SDRAM Specification

SAMSUNG

三星

K4S643232H-TC/L50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TCSLASHL70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL50

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL55

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL60

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TL70

64Mb H-die (x32) SDRAM Specification

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

SAMSUNG

三星

K4S643232H-TC/L60

64Mb H-die (x32) SDRAM Specification

SAMSUNG

三星

K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are po

SAMSUNG

三星

K4S643232E

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件：102.46 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232E

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232E-

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

文件：101.31 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232E-TI

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

文件：100.16 Kbytes Page：12 Pages

SAMSUNG

三星

K4S643232H产品属性

  • 类型

    描述

  • 型号

    K4S643232H

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64Mb H-die(x32) SDRAM Specification

K4S643232H供应商更多...

更新时间：2026-1-27 17:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
K4S643232H-UC60
SAMSUNG
2430+
TSSOP86
8540
只做原装正品假一赔十为客户做到零风险!!
询价
标准国际(香港)有限公司
K4S643232H-TC60
SEC
25+
3
全新原装!优势库存热卖中!
询价
洪芯国际半导体（深圳）有限公司
K4S643232H-UC60
SAMSUNG/三星
26+
TSOP86
86500
一级代理专营品牌!原装正品,现货为客户做到零风险!!
询价
深圳市腾亿芯科技有限公司
K4S643232H-UC60
SAMSUNG/三星
25+
TSOP86
13800
原装,请咨询
询价
深圳市宏世佳电子科技有限公司
K4S643232H-TC50
SAMSUNG
2025+
TSSOP
3783
全新原装、公司现货热卖
询价
深圳市欧立现代科技有限公司
K4S643232H-TC60
SAMSUNG
24+
SSOP
7530
绝对原装现货,价格低,欢迎询购!
询价
深圳市得捷芯城科技有限公司
K4S643232H-UC50
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳诚思涵科技有限公司
K4S643232H-UC60
SAMSUNG
24+
TSSOP86
8000
只做原装正品现货
询价
深圳市英科美电子有限公司
K4S643232H-UC60
SAMSUNG/三星
2425+
TSOP
18800
只做原装正品,每一片都来自原厂
询价
深圳市坤融电子科技有限公司
K4S643232H-UC50
SAMSUNG/三星
2025+
TSOP
980
原装进口价格优 请找坤融电子!
询价

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K4S643232H规格书下载地址

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