位置：首页 > IC中文资料第5601页 > K4S561632
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 |   | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p | Samsung 三星 | | ||
256Mb E-die SDRAM Specification 54pin sTSOP-II GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the | Samsung 三星 | | ||
256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou | Samsung 三星 | | ||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | Samsung 三星 | | ||
4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM 文件：116.95 Kbytes Page：11 Pages | Samsung 三星 | | ||
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 文件：198.76 Kbytes Page：14 Pages | Samsung 三星 | | ||
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 文件：198.76 Kbytes Page：14 Pages | Samsung 三星 | | ||
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 文件：198.76 Kbytes Page：14 Pages | Samsung 三星 | | ||
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 文件：198.76 Kbytes Page：14 Pages | Samsung 三星 | | ||
SDRAM Product Guide 文件：153.79 Kbytes Page：8 Pages | Samsung 三星 | | ||
SDRAM Product Guide 文件：153.79 Kbytes Page：8 Pages | Samsung 三星 | |
K4S561632产品属性
- 类型
描述
- 型号
K4S561632
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
24+ |
TSSOP |
22055 |
郑重承诺只做原装进口现货 |
|||
Samsung |
25+ |
6 |
公司优势库存 热卖中!! |
||||
SAMSUNG |
2025+ |
TSOP54 |
3715 |
全新原厂原装产品、公司现货销售 |
|||
SAMSUNG |
1923+ |
TSOP |
3000 |
绝对进口原装现货 |
|||
SAMSUNG |
22+ |
TSOP |
20000 |
公司只做原装 品质保障 |
|||
SAMSUNG/三星 |
1824+ |
TSOP |
2000 |
原装现货专业代理,可以代拷程序 |
|||
SAMSUNG |
25+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
23+ |
SOP54 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
22+ |
TSOP54 |
8000 |
原装正品支持实单 |
K4S561632芯片相关品牌
K4S561632规格书下载地址
K4S561632参数引脚图相关
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- K4-VAT2
- K4SGW63
- K4S561632E-TC60
- K4S561632E
- K4S561632D-TC75000
- K4S561632D-TC/L7C
- K4S561632D-TC/L75
- K4S561632D-TC/L60
- K4S561632D-TC/L1L
- K4S561632D-TC/L1H
- K4S561632D
- K4S561632C-TC75000
- K4S561632B-TC75
- K4S561632B-TC/L75
- K4S561632B-TC/L1L
- K4S561632B-TC/L1H
- K4S561632B
- K4S561632A-TC/L80
- K4S561632A-TC/L75
- K4S561632A-TC/L1L
- K4S561632A-TC/L1H
- K4S561632A
- K4S560832N-LC75000
- K4S560832N
- K4S560832J-UC75T00
- K4S560832J-UC75000
- K4S560832J-UC/L75
- K4S560832J
- K4S560832H
- K4S560832E-UL75
- K4S560832E-UC75
- K4S560832E-TL75
- K4S560832E-TC75
- K4S560832ETC75
- K4S560832E-NL75
- K4S560832E-NC75
- K4S560832D-TL7C
- K4S560832D-TL7A
- K4S560832D-TL1L
- K4S560832D-TL1H
- K4S560832D-TC7C
- K4S560832D-TC7A
- K4PE68A
- K4N38A
- K4N38
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- K4N25G
- K4N25A
- K4N25
- K4MDW62
K4S561632数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
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2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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