型号 功能描述 生产厂家&企业 LOGO 操作
K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung
K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

Samsung
K4S561632J

SDRAMProductGuide

文件:153.79 Kbytes Page:8 Pages

SamsungSamsung Group

三星三星半导体

Samsung

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

Samsung

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

Samsung

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

Samsung

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

Samsung

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung Group

三星三星半导体

Samsung

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

Samsung

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

文件:116.95 Kbytes Page:11 Pages

SamsungSamsung Group

三星三星半导体

Samsung

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

文件:116.95 Kbytes Page:11 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4S561632J产品属性

  • 类型

    描述

  • 型号

    K4S561632J

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Mb J-die SDRAM Specification

更新时间:2024-5-21 17:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2021+
TSSP
6008
百分百原装正品
SAMSUNG
2020+
SOP3.9MM
350000
100%进口原装正品公司现货库存
SAMSUNG/三星
22+
TSSOP54
9565
SAMSUNG
23+
TSOP
18000
SAMSUNG/三星
21+
TSOP
6000
十年专营,原装现货,假一赔十
SAMSUNG
2018+
TSOP
90000
专营三星全线品牌假一赔万原装进口货可开增值税发票
SAMSUNG/三星
10+
TSOP
10
只做正品,原装现货实单来谈
SAMSUNG原装正品专卖
23+
TSOP-54
18689
专注原装正品现货特价中量大可定
SAMSUNG/三星
21+
TSOP54
9800
只做原装正品假一赔十!正规渠道订货!
SAMSUNG
22+
TSOP54
8000
原装正品支持实单

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