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位置：首页 > IC中文资料第5575页 > K4S161622

型号 功能描述 生产厂家 企业 LOGO 操作
K4S161622D

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L10

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L55

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L60

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L70

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L80

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL10

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL55

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL60

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL70

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL80

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E10

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E50

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E55

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E60

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E70

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E80

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE10

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE50

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE55

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE60

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE70

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE80

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622E

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622E-TC10

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622E-TC55

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622E-TC60

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622E-TC70

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622E-TC80

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622H

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

K4S161622H-TC55

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

K4S161622H-TC60

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

K4S161622H-TC70

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

K4S161622H-TC80

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

K4S161622D

512K x 16Bit x 2 Banks Synchronous DRAM

Samsung

三星

K4S161622H

16Mb H-die SDRAM Specification

Samsung

三星

DS_K4S161622D

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

DS_K4S161622E

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622产品属性

  • 类型

    描述

  • 型号

    K4S161622

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622供应商更多...

更新时间：2025-12-31 10:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
K4S161622D-TC10
24+
SOP
12
询价
深圳市威雅利发展有限公司
K4S161622D-TC10
SAMSUNG
0013+
TSOP50
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市得捷芯城科技有限公司
K4S161622D-TC60
SAMSUNG/三星
24+
NA/
6874
原装现货,当天可交货,原型号开票
询价
深圳市华斯顿科技有限公司
K4S161622D-TC60
SAMSUNG
25+23+
TSOP-50
10671
绝对原装正品全新进口深圳现货
询价
深圳市科翼源电子有限公司
K4S161622D-TC60
SAMSUNG
23+
TSSOP-50
2990
原厂原装正品
询价
深圳市能创芯电子科技有限公司
K4S161622D-TC60
专营SAMSUNG
23+
TSOP
3500
询价
深圳市威尔健半导体有限公司
K4S161622D-TC60
SAMSUNG/三星
23+
TSOP
50000
全新原装正品现货,支持订货
询价
标准国际(香港)有限公司
K4S161622DTC60
Samsung
25+
4
公司优势库存 热卖中!!
询价
深圳市诚利顺电子科技有限公司
K4S161622D-TC60
专营SAMSUNG
22+
ALTERA
30000
十七年VIP会员,诚信经营，一手货源，原装正品可零售！
询价
深圳市科芯源微电子有限公司
K4S161622D-TC50
SAMSUNG/三星
25+
SOP
996880
只做原装,欢迎来电资询
询价

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