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位置：首页 > IC中文资料第5575页 > K4S161622D

型号 功能描述 生产厂家 企业 LOGO 操作
K4S161622D

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D

512K x 16Bit x 2 Banks Synchronous DRAM

Samsung

三星

K4S161622D-TC/L10

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L55

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L60

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L70

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TC/L80

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL10

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL55

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL60

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL70

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TCSLASHL80

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E10

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E50

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E55

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E60

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E70

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TI/E80

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE10

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE50

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE55

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE60

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE70

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622D-TISLASHE80

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

K4S161622E

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622H

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

DS_K4S161622D

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

DS_K4S161622E

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622D产品属性

  • 类型

    描述

  • 型号

    K4S161622D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D供应商更多...

更新时间：2026-1-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
K4S161622D-TC50
SAMSUNG/三星
25+
SOP
996880
只做原装,欢迎来电资询
询价
深圳市振宏微科技有限公司
K4S161622DTC60
SAMSUNG
23+
NA
988
专做原装正品,假一罚百!
询价
深圳市华斯顿科技有限公司
K4S161622D-TC60
SAMSUNG
25+23+
TSOP-50
10671
绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
K4S161622D-TC60
SAMSUNG
22+
TSOP
8000
原装正品支持实单
询价
深圳市恒达亿科技有限公司
K4S161622D-TC60
SAMSUNG-
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
询价
深圳市坤融电子科技有限公司
K4S161622D-TC70
SAMSUNG/三星
2025+
TSSOP
259
原装进口价格优 请找坤融电子!
询价
深圳市毅创腾电子科技有限公司
K4S161622D-TC60
Samsung
23+
TSOP50
1800
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
标准国际(香港)有限公司
K4S161622D-TC80
SEC
25+
4
全新原装!优势库存热卖中!
询价
谛辉(北京/上海/青岛 )电子科技有限公司
K4S161622D-TC60
SAMSUNG
25+
标准封装
18000
原厂直接发货进口原装
询价
深圳市壹芯创科技有限公司
K4S161622D-TC60
SAMSUNG
22+
TSOP50
5000
全新原装现货!价格优惠!可长期
询价

K4S161622D芯片相关品牌

K4S161622D规格书下载地址

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K4S161622D数据表相关新闻

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