型号 功能描述 生产厂家&企业 LOGO 操作
K4S161622H

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

Samsung

三星

512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

三星

K4S161622H产品属性

  • 类型

    描述

  • 型号

    K4S161622H

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16Mb H-die SDRAM Specification

更新时间:2025-8-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
3378
原装现货,当天可交货,原型号开票
SAMSUNG/三星
25+
TSSOP
54648
百分百原装现货 实单必成 欢迎询价
SAMSUNG
24+
TOSP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
0433+;1416+
TSOP50
1215
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
25+
TSSOP
880000
明嘉莱只做原装正品现货
SAMSUNG
25+23+
TSOP
27246
绝对原装正品全新进口深圳现货
SAMSUNG
22+
TSSOP
8000
原装正品支持实单
SAMSUNG
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
SEC
04+
1
全新原装!优势库存热卖中!
SAMSUNG
6200
SOP
17
100%原装正品现货

K4S161622H数据表相关新闻