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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
512Mb C-die DDR SDRAM Specification 文件：212.57 Kbytes Page：24 Pages | SAMSUNG 三星 |   | ||
512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl | SAMSUNG 三星 | | ||
512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages | SAMSUNG 三星 | | ||
512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages | SAMSUNG 三星 | | ||
512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages | SAMSUNG 三星 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
2025+ |
TSOP |
4950 |
原装进口价格优 请找坤融电子! |
|||
SAMSUNG |
25+ |
ROHS |
12 |
全新原装!优势库存热卖中! |
|||
SAMSUNG |
25+ |
480 |
公司现货库存 |
||||
SAMSUNG/三星 |
24+ |
TSOP |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
SAMSUNG |
14+ |
TSOP66 |
9860 |
大量原装进口现货,一手货源,一站式服务,可开17%增 |
|||
SAMSUNG |
24+ |
TSOP66 |
66500 |
郑重承诺只做原装进口现货 |
|||
SAMSUNG/三星 |
25+ |
TSOP-66 |
25000 |
全新原装现货,假一赔十 |
|||
SAMSUNG |
23+ |
TSOP |
1500 |
主打XILINX品牌价格绝对优势 |
|||
SAMSUNG/三星 |
25+ |
TSOP |
13800 |
原装,请咨询 |
|||
SAMSUNG/三星 |
25+ |
TSSOP66 |
12496 |
SAMSUNG/三星原装正品K4H511638J-LCCC即刻询购立享优惠#长期有货 |
K4H511638J-LLBO芯片相关品牌
K4H511638J-LLBO规格书下载地址
K4H511638J-LLBO参数引脚图相关
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DdatasheetPDF页码索引
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