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位置：首页 > IC中文资料第7008页 > K4H510438D

型号 功能描述 生产厂家 企业 LOGO 操作
K4H510438D

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H510438D

DDR SDRAM Product Guide

Consumer Memory

Samsung

三星

K4H510438D

512Mb D-die DDR SDRAM Specification

Samsung

三星

K4H510438

512Mb B-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl

Samsung

三星

K4H510438D-TCA0

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-TCA2

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-TCB0

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-TLA0

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-TLA2

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-TLB0

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

K4H510438D-UC/LA2

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H510438D-UC/LB0

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H510438D-UCSLASHLA2

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H510438D-UCSLASHLB0

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

Samsung

三星

K4H510438B-GC/LCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H510438B-GCSLASHLCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H510438B-ZC/LCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H510438B-ZCSLASHLCC

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

Samsung

三星

K4H510438D产品属性

  • 类型

    描述

  • 型号

    K4H510438D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    DDR SDRAM Product Guide

K4H510438D供应商更多...

更新时间：2025-11-19 10:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
京海半导体(深圳)有限公司
K4H510438D-ZCCC
SAMSUNG/三星
23+
BGA
98900
原厂原装正品现货!!
询价
深圳市澳亿芯电子科技有限公司
K4H510438D-ZCCC
SAMSUNG/三星
24+
BGA
12000
原装正品 有挂就有货
询价
深圳市得捷芯城科技有限公司
K4H510438D-UCB3
SAMSUNG/三星
24+
NA/
3530
原装现货,当天可交货,原型号开票
询价
深圳市华斯顿科技有限公司
K4H510438D-UCB3
SAMSUNG
25+23+
TSSOP66
36634
绝对原装正品全新进口深圳现货
询价
上海市鑫鸿达电子
K4H510438D-ZCB3
Samsung
2022+
47
全新原装 货期两周
询价
深圳市明嘉莱科技有限公司
K4H510438G-HCB3
SAMSUNG/三星
24+
NA
990000
明嘉莱只做原装正品现货
询价
深圳市振宏微科技有限公司
K4H510438FLCB3
SAM
23+
NA
128
专做原装正品,假一罚百!
询价
深圳市科恒伟业电子有限公司
K4H510438D-UCBO
SMD
2450+
SMD
9850
只做原装正品现货或订货假一赔十!
询价
深圳市华来深电子有限公司
K4H510438D-ZCCC
SAMSUNG
23+
BGAP/B
8560
受权代理!全新原装现货特价热卖!
询价
深圳市威尔健半导体有限公司
K4H510438D-ZCCC
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价

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