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位置：首页 > IC中文资料第6954页 > K4E640812E

型号 功能描述 生产厂家 企业 LOGO 操作
K4E640812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

Samsung

三星

K4E640812E-JC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812E-JCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812E-TCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812C

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E640812E产品属性

  • 类型

    描述

  • 型号

    K4E640812E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E640812E供应商更多...

更新时间：2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
K4E640812E-TC60
SAMSUNG/三星
24+
NA/
3698
原装现货,当天可交货,原型号开票
询价
上海意淼电子科技有限公司
K4E640812E-TC60
SAMSUNG
23+
TSOP
20000
全新原装假一赔十
询价
深圳市明嘉莱科技有限公司
K4E640812E-TC60
SAMSUNG/三星
24+
TSOP32
880000
明嘉莱只做原装正品现货
询价
深圳市赛美科科技有限公司
K4E640812E-TC60
SAMSUNG
TSOP32
9850
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市凌旭科技有限公司
K4E640812E-TC60
SAMSUNG/三星
21+
TSOP32
1709
询价
深圳市芯皇电子有限公司
K4E640812E-TC60
SAMSUNG/三星
TSOP32
23+
6000
原装现货有上库存就有货全网最低假一赔万
询价
深圳市卓越微芯电子有限公司
K4E640812E-TC60
SAMSUNG
25+
SSOP
5
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市益百分电子有限公司
K4E640812E-TC60
SAMSUNG
02+
TSOP
2255
全新原装进口自己库存优势
询价
深圳市美思瑞电子科技有限公司
K4E640812E-TC60
SAMSUNG/三星
22+
TSOP32
12245
现货,原厂原装假一罚十!
询价
谛辉(北京/上海/青岛 )电子科技有限公司
K4E640812E-TC60
SAMSUNG 
25+
标准封装
18000
原厂直接发货进口原装
询价

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