位置：首页 > IC中文资料第5543页 > K4D263238M
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4D263238M | 1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 |  |   |
1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | | |
K4D263238M产品属性
- 类型
描述
- 型号
K4D263238M
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
01+ |
TQFP |
362 |
向鸿原装正品/代理渠道/现货优势 |
|||
SAMSUNG |
111+ |
QFP |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG |
2023+ |
QFP |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SAMSUNG |
2022 |
TQFP100 |
5280 |
原厂原装正品,价格超越代理 |
|||
SAMSUNG |
23+ |
QFP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SAMSUNG |
23+ |
TQFP |
50000 |
只做原装正品 |
|||
SAMSUNG/三星 |
1926+ |
QFP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
SAMSUNG(三星) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
SAMSUNG/三星 |
22+ |
QFP |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
20+ |
QFP |
9986 |
K4D263238M芯片相关品牌
K4D263238M规格书下载地址
K4D263238M参数引脚图相关
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K4D263238M数据表相关新闻
K4B4G1646E-BYMA中文资料，PDF数据手册，现货供应商，假一罚十
K4B4G1646E-BYMA品牌:SAMSUNG数量:46639批号:20+封装:BGA
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DdatasheetPDF页码索引
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