型号 功能描述 生产厂家 企业 LOGO 操作
K4D263238E

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

K4D263238E

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high

Samsung

三星

128Mbit GDDR SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

K4D263238E产品属性

  • 类型

    描述

  • 型号

    K4D263238E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

更新时间:2025-12-27 15:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
2450+
BGA
9485
只做原装正品现货或订货假一赔十!
SAMSUNG
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG
22+
FBGA144
5000
全新原装现货!自家库存!
SAMSUNG
19+
BGA
12508
SAMSUNG/三星
2025+
BGA
5000
原装进口价格优 请找坤融电子!
SANSUNG
2023+
BGA
65000
现货原装正品公司优
SAMSUNG/三星
2402+
BGA
8324
原装正品!实单价优!
三星
24+
TSOP
6523
郑重承诺只做原装进口现货
ADI
MSOP10
2568
只做进口原装!假一罚十!公司现货库存!

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