位置：首页 > IC中文资料第5466页 > K4D263238G-GC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4D263238G-GC | 128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 |  |   |
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | | | |
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | | | |
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | |
K4D263238G-GC产品属性
- 类型
描述
- 型号
K4D263238G-GC
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128Mbit GDDR SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUN |
2016+ |
BGA144 |
2000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
SAMSUNG/三星 |
1950+ |
BGA. |
4856 |
只做原装正品现货!或订货假一赔十! |
|||
SAMSUNG/三星 |
0824+ |
BGA |
11701 |
只做原厂原装,认准宝芯创配单专家 |
|||
NA |
22+ |
N/A |
354000 |
||||
SAMSUNG/三星 |
23+ |
NA/ |
1074 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG |
2020+ |
BGA |
1825 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SAMSUNG |
23+ |
BGA |
1013 |
全新原装现货 |
|||
SAMSUNG |
FBGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAMSUNG |
22+ |
NEW |
360000 |
进口原装房间现货实库实数 |
K4D263238G-GC芯片相关品牌
K4D263238G-GC规格书下载地址
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K4D263238G-GC数据表相关新闻
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K4B4G1646E-BYMA品牌:SAMSUNG数量:46639批号:20+封装:BGA
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DdatasheetPDF页码索引
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