型号 功能描述 生产厂家 企业 LOGO 操作
K4D263238G-GC

128Mbit GDDR SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

K4D263238G-GC

128Mbit GDDR SDRAM

Samsung

三星

128Mbit GDDR SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

128Mbit GDDR SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

128Mbit GDDR SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

128Mbit GDDR SDRAM

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high

Samsung

三星

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high

Samsung

三星

K4D263238G-GC产品属性

  • 类型

    描述

  • 型号

    K4D263238G-GC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mbit GDDR SDRAM

更新时间:2025-11-6 18:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
16+
BGA
39300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
25+
标准封装
18000
原厂直接发货进口原装
SEC
BGA
05+
226
全新原装进口自己库存优势
SAMSUNG
FBGA
68500
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG/三星
23+
FBGA
98900
原厂原装正品现货!!
SAMSUNG
20+
BGA
2860
原厂原装正品价格优惠公司现货欢迎查询
SAMSUNG
25+
BGA
3386
品牌专业分销商,可以零售
SAmSuNG
23+
BGA
20000
全新原装假一赔十
SAMSUNG
6000
面议
19
BGA
SAMSUNG
25+23+
BGA
36250
绝对原装正品全新进口深圳现货

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