N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe 2SK2857 is a switching device which can be driven directly by a 5V power source.\nThe 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver.FEATURES\n• Can be driven by a 5V power source.\n• Low O • Can be driven by a 5V power source.\n• Low On-state resistance :\n   RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)\n   RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ;

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

MICROPOWER VOLTAGE REFERENCE DIODES

The LM285/LM385 series are micropower two–terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 µA to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are ac

Silicon Complementary Transistors Audio Amplifier Output

Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: ● Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage

Adjustable Micropower Voltage References

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Adjustable Micropower Voltage References

文件：747.67 Kbytes Page：14 Pages